In1Ga1Cu1S3.5

semiconductor

· In1Ga1Cu1S3.5

In₁Ga₁Cu₁S₃.₅ is a quaternary chalcogenide semiconductor compound combining indium, gallium, copper, and sulfur. This material belongs to the I-III-VI₂ semiconductor family and is primarily of research interest for photovoltaic and optoelectronic applications, where its tunable bandgap and mixed-cation composition offer potential advantages over binary or ternary alternatives in absorber layer design.

thin-film photovoltaicsoptoelectronic researchsolar cells (experimental)bandgap engineeringsemiconductor absorber layersphotocatalysis (emerging)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.840	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Ga1Cu1S3.5

Electrical Properties

Regulatory Screening

Environmental

Export Control