In1

semiconductor

· In1

Indium nitride (InN) is a III-V compound semiconductor with a direct bandgap, belonging to the nitride semiconductor family alongside gallium nitride and aluminum nitride. It is primarily investigated for high-frequency optoelectronic devices and next-generation photovoltaic applications, where its narrow bandgap and high electron mobility offer advantages over wider-gap III-V semiconductors; however, it remains largely in research and development phases with limited commercial deployment compared to GaN-based devices.

high-frequency RF transistorsinfrared optoelectronicssolar cells and photovoltaicsthermal imaging detectorsresearch semiconductor materialswide bandgap device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,163.3	ksi	—
Shear Modulus(G)	1,415.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control