In1 Si1 Te3

semiconductor

· In1 Si1 Te3

InSiTe₃ is an indium-silicon-tellurium ternary semiconductor compound, likely studied as a narrow-bandgap material for optoelectronic and thermoelectric applications. This is primarily a research-phase compound rather than an established commercial material; it belongs to the family of III-V and III-VI semiconductors being explored for infrared detection, photovoltaic energy conversion, and solid-state cooling devices where conventional materials like GaAs or PbTe show limitations.

infrared detectorsthermoelectric coolingnarrow-bandgap photovoltaicsoptoelectronic researchthermal energy harvestingspace instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01630	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.08300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Si1 Te3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control