In₁Si₁Pt₅ is an intermetallic compound combining indium, silicon, and platinum, belonging to the broader class of metal-silicon-platinum ternary systems. This is a research-stage material studied primarily for its electronic and structural properties rather than a mainstream engineering material; compounds in this family are investigated for potential applications in high-temperature electronics, thermoelectric devices, and specialized semiconductor contacts where the combination of noble metal (Pt) stability with semiconductor dopants (In, Si) offers tunable electrical behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 201.5 | GPa | — | ||
Shear Modulus(G) | 69.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4910 | eV/atom | — |