In₁Sb₃ is a III-V semiconductor compound composed of indium and antimony, belonging to the narrow-bandgap material family used primarily in infrared and thermal imaging applications. This material is valued in defense, aerospace, and scientific instrumentation for its exceptional sensitivity to long-wavelength infrared radiation, enabling detection and imaging in the 3–5 μm and 8–12 μm atmospheric windows where it outperforms broader-bandgap alternatives. In₁Sb₃ is also investigated for thermoelectric energy conversion and cryogenic applications where its narrow bandgap and high carrier mobility provide advantages, though it remains less commercially mature than related compounds like InSb and InAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00555 range 0.00450–0.00660median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1920 range 0.1900–0.1940median of 2 measurements | eV/atom | — |