InSb (indium antimonide) is a III-V compound semiconductor formed from indium and antimony, belonging to the family of binary intermetallic semiconductors. It is primarily used in infrared detection and sensing applications, particularly in thermal imaging systems, military surveillance, and space-based observatories, where its narrow bandgap and high electron mobility enable sensitive detection of infrared radiation. InSb is valued over alternatives like germanium and HgCdTe in certain mid-wavelength infrared (MWIR) applications due to its superior performance at higher operating temperatures and lower cost for specific detector geometries.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.87 | GPa | — | ||
Shear Modulus(G) | 22.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.04800 | eV/atom | — |