In1 P1 F3

semiconductor

· In1 P1 F3

Indium phosphide (InP) is a III-V semiconductor compound widely used in optoelectronic and high-frequency applications. It is valued for its direct bandgap, high electron mobility, and suitability for infrared emission, making it a preferred material where gallium arsenide performance needs to be exceeded or where specific wavelength requirements demand an alternative III-V platform. InP-based devices benefit from mature epitaxial growth techniques and offer superior performance in demanding telecommunications and sensing environments compared to silicon-based alternatives.

fiber-optic communicationsinfrared LEDs and lasershigh-frequency RF transistorsphotodetectors and avalanche photodiodesmillimeter-wave integrated circuitsspace and radiation-hardened electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	33.50	GPa	—
Shear Modulus(G)	7.800	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.09690	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.530	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 P1 F3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control