In1 P1 F3
semiconductor· In1 P1 F3
Indium phosphide (InP) is a III-V semiconductor compound widely used in optoelectronic and high-frequency applications. It is valued for its direct bandgap, high electron mobility, and suitability for infrared emission, making it a preferred material where gallium arsenide performance needs to be exceeded or where specific wavelength requirements demand an alternative III-V platform. InP-based devices benefit from mature epitaxial growth techniques and offer superior performance in demanding telecommunications and sensing environments compared to silicon-based alternatives.
fiber-optic communicationsinfrared LEDs and lasershigh-frequency RF transistorsphotodetectors and avalanche photodiodesmillimeter-wave integrated circuitsspace and radiation-hardened electronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.