In1 Ge1 Cl3
semiconductorInGeCl₃ is an experimental semiconductor compound combining indium, germanium, and chlorine—a hybrid halide perovskite-related material currently under investigation for optoelectronic applications. This material belongs to the emerging family of metal halide semiconductors being explored for next-generation photovoltaic devices, light-emitting applications, and radiation detection due to tunable bandgap and solution-processability advantages over conventional inorganic semiconductors. Research into such mixed-metal halides is motivated by the potential for low-cost manufacturing and performance improvements in efficiency and stability compared to traditional silicon or GaAs alternatives, though the material remains largely in the development stage with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |