In1 Bi2 S4 Cl1
semiconductorIn₁Bi₂S₄Cl₁ is a mixed-halide chalcogenide semiconductor compound combining indium, bismuth, sulfur, and chlorine—a class of materials actively explored in solid-state physics and materials research for optoelectronic and photovoltaic applications. This compound belongs to the family of layered semiconductors and is primarily of research interest rather than established industrial production; such mixed-anion semiconductors are investigated for their tunable bandgaps, potential in thin-film devices, and novel electronic properties that may differ from single-element or binary analogs. Engineers and researchers consider these materials when designing next-generation photovoltaic absorbers, nonlinear optical devices, or specialized sensors where the combination of heavy elements (Bi, In) and sulfur-chlorine anion mixing offers band-structure engineering opportunities.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |