In1 Bi1
semiconductorInBi (indium bismuth) is a binary semiconductor compound that belongs to the III-V semiconductor family, though it represents a less common combination compared to mainstream III-V materials. This material is primarily of research interest for potential optoelectronic and thermoelectric applications, where its narrow bandgap and unique band structure could offer advantages in infrared detection, narrow-bandgap photovoltaics, or low-temperature thermoelectric generators. While not yet commercially dominant, InBi and related narrow-gap semiconductors are investigated as alternatives to mercury cadmium telluride (HgCdTe) and other toxic or difficult-to-process materials, particularly for infrared sensing in military and scientific instrumentation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |