In1 As1 Pt5
semiconductor· In1 As1 Pt5
InAs–Pt is an intermetallic compound combining indium arsenide (a III–V semiconductor) with platinum, creating a hybrid material that bridges semiconducting and metallic properties. This composition is primarily of research interest for quantum device applications and topological electronic systems, where the combination of a narrow-bandgap semiconductor with a high-Z metal enables tunable band structure and strong spin–orbit coupling effects. InAs–Pt heterostructures and nanostructures are explored in academic and early-stage industrial settings for Majorana fermion detection, quantum computing qubits, and next-generation spintronic devices, though practical device-scale manufacturing remains limited.
quantum computing researchtopological electronicsspintronics devicesnanowire heterostructuresfundamental physics experimentation
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.