In₁Ag₁Se₂ is a ternary semiconductor compound combining indium, silver, and selenium in a layered chalcogenide structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and mixed-cation composition offer potential advantages over binary selenides in light absorption and charge transport. It belongs to the family of silver-indium selenides being explored for thin-film solar cells, photodetectors, and solid-state electronics where cost-effective alternatives to cadmium telluride or copper indium gallium selenide are sought.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3410 | eV/atom | — |