In₁Ag₁S₂ is a ternary chalcogenide semiconductor compound combining indium, silver, and sulfur in a layered crystal structure. This material belongs to the family of silver-indium sulfides and remains primarily a research compound of interest for studying mixed-metal semiconductor behavior and optoelectronic phenomena. The silver-indium sulfide family is investigated for potential applications in photovoltaics, photodetectors, and thin-film electronics, where the presence of silver can influence bandgap tuning and carrier transport compared to binary indium sulfide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4210 | eV/atom | — |