In₁.₉₉₄Ge₀.₀₀₆O₃ is an indium germanium oxide ceramic—a heavily indium-doped oxide compound with minimal germanium substitution. This is a research-phase material rather than a standard industrial ceramic, synthesized to investigate how germanium doping modifies the electronic and thermal properties of indium oxide. The germanium addition at the ~0.3% level typically serves to fine-tune band structure or defect chemistry in transparent conducting oxide (TCO) or optoelectronic applications, where indium oxide derivatives are fundamental.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 9.715 | W/(m·K) | — | ||
| ↳ | 9.715 | W/(m·K) | 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 1,195 | S/cm | 27°C | ||
Electrical Resistivity(ρe) | 0.00000837 | Ω·m | 27°C | ||
Thermoelectric Power Factor(PF) | 0.000304 | W/(m·K²) | 27°C | ||
Seebeck Coefficient(S) | -50.48 | μV/K | 27°C | ||
Thermoelectric Figure of Merit(zT) | 0.00940 | - | 27°C |