In₁.₉₈₅Ge₀.₀₁₅O₃ is an indium germanium oxide ceramic compound with a heavily indium-doped composition, representing a variant within the indium oxide family of wide-bandgap semiconducting ceramics. This material is primarily investigated for transparent conductive oxide (TCO) applications and optoelectronic devices, where the germanium dopant modifies the electrical and optical properties relative to pure indium oxide. The composition occupies a research-phase niche, balancing the conductivity advantages of indium oxide with potential improvements in thermal stability or optical performance through controlled germanium incorporation—making it of interest to developers seeking alternatives to conventional ITO (indium tin oxide) in specialized display, photovoltaic, or sensing contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 4.072 | BTU/(hr·ft·°F) | — | ||
| ↳ | 4.072 | BTU/(hr·ft·°F) | 127°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 1,222.6 | S/cm | 127°C | ||
Electrical Resistivity(ρe) | 0.00000818 | Ω·m | 127°C | ||
Thermoelectric Power Factor(PF) | 0.000392 | W/(m·K²) | 127°C | ||
Seebeck Coefficient(S) | -56.59 | μV/K | 127°C | ||
Thermoelectric Figure of Merit(zT) | 0.02222 | - | 127°C |