In1.8Ge0.2O3 is an indium-germanium mixed oxide ceramic compound belonging to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors. This material is primarily of research and development interest for next-generation optoelectronic and semiconductor applications where the combination of indium and germanium oxides offers tunable electrical and optical properties distinct from single-component alternatives. The mixed-cation composition provides potential advantages in thin-film device fabrication, particularly where lightweight, transparent functionality or specific bandgap engineering is required in emerging photonic or electronic device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 2.611 | W/(m·K) | — | ||
| ↳ | 2.611 | W/(m·K) | 127°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 357.7 | S/cm | 127°C | ||
Electrical Resistivity(ρe) | 0.0000280 | Ω·m | 127°C | ||
Thermoelectric Power Factor(PF) | 0.000147 | W/(m·K²) | 127°C | ||
Seebeck Coefficient(S) | -64.02 | μV/K | 127°C | ||
Thermoelectric Figure of Merit(zT) | 0.02246 | - | 127°C |