In1.01Cu0.99Se2.01

semiconductor

· In1.01Cu0.99Se2.01

In1.01Cu0.99Se2 is a quaternary semiconductor compound in the I–III–VI family, formed by partial substitution of indium and copper in indium selenide. This material is primarily of research interest for thin-film photovoltaic and optoelectronic applications, where its tunable bandgap and direct electronic transitions make it attractive for solar cells and photodetectors operating in the visible to near-infrared spectrum. Compared to binary selenides, the mixed-cation composition allows engineering of electronic structure and defect tolerance, positioning it as a candidate for next-generation absorber layers in tandem or high-efficiency solar architectures.

thin-film solar cellsphotovoltaic researchoptoelectronic devicesphotodetectorssemiconductor heterostructuresbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.080	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1.01Cu0.99Se2.01

Electrical Properties

Regulatory Screening

Environmental

Export Control