In1
semiconductor· In1
Indium nitride (InN) is a III-V compound semiconductor with a direct bandgap, belonging to the nitride semiconductor family alongside gallium nitride and aluminum nitride. It is primarily investigated for high-frequency optoelectronic devices and next-generation photovoltaic applications, where its narrow bandgap and high electron mobility offer advantages over wider-gap III-V semiconductors; however, it remains largely in research and development phases with limited commercial deployment compared to GaN-based devices.
high-frequency RF transistorsinfrared optoelectronicssolar cells and photovoltaicsthermal imaging detectorsresearch semiconductor materialswide bandgap device development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.