In0.9Ga0.1As0.9P0.1

semiconductor

· In0.9Ga0.1As0.9P0.1

In0.9Ga0.1As0.9P0.1 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched configuration to InP substrates. This material is engineered for optoelectronic and high-frequency electronic applications where precise bandgap tuning and lattice matching are critical, particularly in the near-infrared to visible spectrum region.

optical fiber communication deviceshigh-electron-mobility transistors (HEMT)integrated photonics and waveguidesquantum well structuresresearch/specialty semiconductorsmonolithic microwave integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9Ga0.1As0.9P0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control