In0.9Ga0.1As0.1P0.9

semiconductor

· In0.9Ga0.1As0.1P0.9

In₀.₉Ga₀.₁As₀.₁P₀.₉ is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus—a lattice-matched compound engineered for optoelectronic and electronic device applications. This material is primarily used in research and specialized high-performance applications where bandgap engineering and lattice matching to indium phosphide (InP) substrates are critical, making it valuable for infrared LEDs, laser diodes, and integrated photonic circuits operating in the near-infrared spectrum. Its composition sits in the InGaAsP family, which dominates long-wavelength telecommunications and sensing systems where performance exceeds standard GaAs alternatives.

infrared optoelectronicsfiber-optic communicationslaser diodes and LEDsintegrated photonicslong-wavelength sensorsresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9Ga0.1As0.1P0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control