In0.9As0.9Ga0.1P0.1

semiconductor

· In0.9As0.9Ga0.1P0.1

In0.9As0.9Ga0.1P0.1 is a quaternary III-V semiconductor alloy combining indium arsenide with small substitutions of gallium and phosphorus, representing a composition variant within the InAs material family. This experimental alloy is primarily of research interest for tuning the bandgap and lattice properties of InAs-based devices, with potential applications in infrared detection, high-mobility electronics, and narrow-bandgap optoelectronics where the gallium and phosphorus additions modify the native InAs characteristics. The material is not widely commercialized but exemplifies the type of engineered III-V compounds used when standard binary or ternary semiconductors cannot meet specific performance requirements for wavelength sensitivity or carrier transport.

infrared photodetectorsquantum well structureshigh-mobility transistorsoptoelectronic researchbandgap engineeringIII-V epitaxial devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9As0.9Ga0.1P0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control