In0.9Al0.1P

semiconductor

· In0.9Al0.1P

In0.9Al0.1P is an indium phosphide-based III-V semiconductor alloy with aluminum doping, engineered to modify the bandgap and electronic properties of InP. This material is primarily investigated in optoelectronic and high-speed electronic device research, where the aluminum incorporation enables bandgap engineering for wavelength tuning in infrared emitters and detectors, as well as potential improvements in heterojunction structures for photodiodes and quantum well devices. Compared to pure InP, the aluminum-doped variant offers design flexibility for lattice matching in heterostructures and thermal stability optimization, making it particularly valuable in integrated photonic systems and space-grade radiation-hardened electronics.

infrared photodetectorsquantum well lasersintegrated photonicsspace electronicsheterojunction solar cellshigh-speed RF transistors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9Al0.1P

Electrical Properties

Regulatory Screening

Environmental

Export Control