In0.99P0.99Ga0.01As0.01

semiconductor

· In0.99P0.99Ga0.01As0.01

In₀.₉₉P₀.₉₉Ga₀.₀₁As₀.₀₁ is a quaternary III-V semiconductor alloy based on InP with small gallium and arsenic substitutions, designed to fine-tune the bandgap and lattice parameters for optoelectronic applications. This material family is used in high-performance photodetectors, laser diodes, and integrated photonic circuits operating in the infrared region, where the precise composition allows engineers to optimize wavelength response and lattice-matching to substrates. The near-InP composition makes it particularly relevant for long-wavelength telecommunications and sensing applications where InP-based devices dominate, though this specific alloy likely represents a research or specialized composition rather than a commodity material.

infrared photodetectorstelecommunication wavelength lasersintegrated photonicsspace/astronomy sensingfiber-optic communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.99P0.99Ga0.01As0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control