In0.99Ga0.01As0.01P0.99 is a quaternary III-V compound semiconductor, a heavily indium-phosphide-based alloy with trace gallium and arsenic additions designed to fine-tune bandgap and lattice parameters. This material belongs to the indium phosphide (InP) family and is primarily of research interest for optoelectronic and high-frequency devices, where small compositional variations enable bandgap engineering for specific wavelength or electrical performance targets without significantly departing from InP's established processing infrastructure. The near-unity phosphorus content and minimal substitutional doping make it relevant for lattice-matched or near-lattice-matched heterojunction structures in infrared detectors, long-wavelength lasers, and high-electron-mobility transistors (HEMTs) operating in telecommunications and space applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.300 | eV | — |