In0.99Ga0.01As0.01P0.99

semiconductor
· In0.99Ga0.01As0.01P0.99

In0.99Ga0.01As0.01P0.99 is a quaternary III-V compound semiconductor, a heavily indium-phosphide-based alloy with trace gallium and arsenic additions designed to fine-tune bandgap and lattice parameters. This material belongs to the indium phosphide (InP) family and is primarily of research interest for optoelectronic and high-frequency devices, where small compositional variations enable bandgap engineering for specific wavelength or electrical performance targets without significantly departing from InP's established processing infrastructure. The near-unity phosphorus content and minimal substitutional doping make it relevant for lattice-matched or near-lattice-matched heterojunction structures in infrared detectors, long-wavelength lasers, and high-electron-mobility transistors (HEMTs) operating in telecommunications and space applications.

infrared photodetectorsfiber-optic communication lasershigh-electron-mobility transistorslattice-matched heterostructuresspace/satellite electronicsmillimeter-wave integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.