In0.99Al0.01P

semiconductor

· In0.99Al0.01P

In0.99Al0.01P is an aluminum-doped indium phosphide compound semiconductor, a variant of the III-V semiconductor family engineered by substituting a small fraction of indium with aluminum. This material is primarily of research interest for optoelectronic and high-frequency applications, where the aluminum doping modifies the bandgap and carrier properties of the base InP lattice to tailor performance for specific device requirements. InP-based compounds are widely used in infrared LEDs, photodetectors, and high-speed transistors for telecommunications and sensing, with aluminum doping allowing engineers to fine-tune wavelength response and electrical characteristics compared to pure InP.

infrared optoelectronicstelecommunications lasers and detectorshigh-electron-mobility transistors (HEMTs)research semiconductorsfiber-optic communicationbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.99Al0.01P

Electrical Properties

Regulatory Screening

Environmental

Export Control