In0.96As0.96Cd0.04Te0.04

semiconductor

· In0.96As0.96Cd0.04Te0.04

In0.96As0.96Cd0.04Te0.04 is a quaternary III-V semiconductor alloy based on indium arsenide with cadmium and tellurium dopants, engineered to modify the bandgap and electronic properties of the InAs host material. This is a research-phase compound designed for infrared optoelectronic applications where tuned bandgap energy and carrier dynamics are critical; cadmium and tellurium incorporation shifts the material's response into the mid- to long-wavelength infrared spectrum compared to undoped InAs. The material targets specialized detection and emission devices where lattice-matched or near-lattice-matched growth on InAs or related substrates enables monolithic device integration.

infrared photodetectorsthermal imaging sensorsquantum well structuresnarrowband IR emittersresearch optoelectronicstunable bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.96As0.96Cd0.04Te0.04

Electrical Properties

Regulatory Screening

Environmental

Export Control