In0.94As0.94Cd0.06Te0.06

semiconductor

· In0.94As0.94Cd0.06Te0.06

In0.94As0.94Cd0.06Te0.06 is a quaternary III-V semiconductor alloy based on the InAs system with cadmium and tellurium dopants, designed to engineer the bandgap and lattice parameters for infrared optoelectronic applications. This material represents an experimental or specialized compound within the indium arsenide family, used primarily in research contexts for infrared detectors, thermal imaging sensors, and mid-wave to long-wave infrared (MWIR/LWIR) devices where bandgap tuning is critical. The cadmium and tellurium additions allow fine control of electronic and optical properties compared to binary InAs, making it valuable for applications requiring wavelength selectivity in the infrared spectrum.

infrared detectorsthermal imaging sensorsMWIR/LWIR optoelectronicsbandgap engineeringresearch/development semiconductorsquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.94As0.94Cd0.06Te0.06

Electrical Properties

Regulatory Screening

Environmental

Export Control