In0.8Ga0.2As0.2P0.8

semiconductor

· In0.8Ga0.2As0.2P0.8

In0.8Ga0.2As0.2P0.8 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus, engineered to achieve specific bandgap and lattice properties intermediate between InP and GaAs binary compounds. This material is primarily used in optoelectronic and high-frequency electronic devices where lattice matching to InP substrates and tunable optical properties are critical, particularly in long-wavelength infrared photodetectors, fiber-optic communications (1.3–1.55 μm region), and high-electron-mobility transistors (HEMTs) for microwave and millimeter-wave applications.

fiber-optic communicationsinfrared photodetectorshigh-frequency transistors (HEMT)optoelectronic integrated circuitslattice-matched heterostructuresresearch compound/advanced semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8Ga0.2As0.2P0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control