In0.8Al0.2P

semiconductor

· In0.8Al0.2P

In0.8Al0.2P is a III-V compound semiconductor alloy formed by substituting aluminum into indium phosphide (InP), creating a direct-bandgap material intermediate between InP and AlP. This material is primarily of research and development interest for optoelectronic and high-frequency electronic devices, where lattice-matched or near-lattice-matched heterostructures with InP substrates are desirable; it finds niche use in specialized quantum well lasers, photodetectors, and high-electron-mobility transistors (HEMTs) where the modified bandgap and bandoffset enable performance tuning compared to binary InP.

quantum well lasersoptoelectronic heterostructureshigh-electron-mobility transistors (HEMTs)infrared photodetectorsresearch/development semiconductorslattice-matched device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8Al0.2P

Electrical Properties

Regulatory Screening

Environmental

Export Control