In0.7P0.7Ga0.3As0.3

semiconductor

· In0.7P0.7Ga0.3As0.3

In0.7P0.7Ga0.3As0.3 is a quaternary III-V semiconductor alloy combining indium phosphide and gallium arsenide lattice structures, designed to achieve specific bandgap and lattice-matching properties for optoelectronic and high-frequency applications. This material family is primarily explored in research contexts for integrated photonic devices, high-speed transistors, and infrared emitters where lattice matching to InP or GaAs substrates is critical. The quaternary composition allows engineers to tune bandgap and refractive index independently, making it valuable for wavelength-division multiplexing systems and monolithic integrated circuits that would be difficult or impossible with binary or ternary compounds alone.

integrated photonicshigh-speed optoelectronicsinfrared emitters and detectorsquantum well structuresresearch semiconductorslattice-matched heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.7P0.7Ga0.3As0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control