In0.7Al0.3P

semiconductor

· In0.7Al0.3P

In0.7Al0.3P is a quaternary III-V semiconductor compound formed by alloying indium phosphide (InP) with aluminum phosphide (AlP). This direct bandgap material is primarily of research and development interest for optoelectronic and high-frequency electronic applications, where it can be engineered to bridge performance gaps between InP and AlP or to achieve lattice-matching with other III-V layers for heterostructure devices. The aluminum incorporation allows bandgap tuning and can improve thermal stability and breakdown voltage compared to pure InP, making it relevant for quantum well lasers, high-electron-mobility transistors (HEMTs), and integrated photonic circuits operating in the near-infrared to infrared spectral range.

quantum well lasershigh-frequency transistors (HEMTs)integrated photonicsoptoelectronic heterostructuresinfrared detectorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.7Al0.3P

Electrical Properties

Regulatory Screening

Environmental

Export Control