In0.72Ga0.28As1

semiconductor
· In0.72Ga0.28As1

In₀.₇₂Ga₀.₂₈As is a III-V compound semiconductor alloy formed by combining indium arsenide and gallium arsenide in a specific composition ratio, tuned to achieve a direct bandgap in the near-infrared region around 0.75 µm wavelength. This material is used primarily in optoelectronic devices—particularly high-speed photodetectors, laser diodes, and integrated photonic circuits—where its lattice-matched or near-lattice-matched properties on InP substrates enable efficient quantum-well heterostructures. Engineers select this alloy when demanding both high quantum efficiency in the near-IR and thermal stability, making it particularly valuable for fiber-optic communications and scientific instrumentation where competing InGaAs compositions may not provide the optimal bandgap or lattice match.

fiber-optic communicationsnear-infrared photodetectorsquantum-well lasersintegrated photonicshigh-speed optical receiversinfrared sensing systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.