In0.6Al0.4P

semiconductor

· In0.6Al0.4P

In0.6Al0.4P is a III-V direct bandgap semiconductor alloy composed of indium, aluminum, and phosphorus, engineered to tune the electronic and optical properties between InP and AlP end-members. This material is primarily investigated for optoelectronic and high-frequency electronic applications where the bandgap and lattice parameters must be precisely controlled; it is less common in high-volume production than ternary compounds like InGaAs or AlGaAs, but offers potential for specialized photodetectors, light-emitting devices, and heterojunction structures in research and niche commercial settings.

photodetectors and optical sensorsheterojunction transistorshigh-speed electronics researchinfrared optoelectronicslattice-engineered devicessemiconductor research substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.6Al0.4P

Electrical Properties

Regulatory Screening

Environmental

Export Control