In0.5P0.5Ga0.5As0.5
semiconductor· In0.5P0.5Ga0.5As0.5
In₀.₅P₀.₅Ga₀.₅As₀.₅ is a quaternary III-V semiconductor alloy combining indium phosphide and gallium arsenide in equal proportions, engineered to achieve intermediate bandgap and lattice parameters between its binary end-members. This material exists primarily in research and development contexts, where it is studied for optoelectronic and high-frequency applications that require tunable electronic properties; the lattice-matched or near-lattice-matched character of such quaternary alloys enables heterostructure design for infrared emitters, photodetectors, and high-electron-mobility transistors (HEMTs) that cannot be realized with single binary compounds alone.
infrared optoelectronics (LEDs, lasers, detectors)high-frequency/high-speed transistorsheterojunction devicesresearch and developmentnext-generation photonics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.