In0.5Ga0.5P

semiconductor
· In0.5Ga0.5P

In₀.₅Ga₀.₅P is a ternary III-V compound semiconductor formed by combining indium phosphide and gallium phosphide in equal proportions, creating a direct bandgap material with lattice parameters between its parent compounds. This alloy is primarily explored in optoelectronic and photovoltaic research, where it serves as a tunable material for designing light-emitting devices, solar cells, and high-efficiency tandem junction architectures that leverage bandgap engineering. Its primary advantage lies in bandgap tunability and the ability to lattice-match or nearly lattice-match to various substrates, making it valuable for monolithic multijunction solar cells and integrated photonic devices where precise energy gap control is critical.

multijunction solar cellsoptoelectronic devicesspace power systemsbandgap engineeringphotovoltaic researchintegrated photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.