In0.5Ga0.5P1

semiconductor

· In0.5Ga0.5P1

In0.5Ga0.5P1 is a direct-bandgap III–V semiconductor alloy formed by combining indium phosphide (InP) and gallium phosphide (GaP) in equal proportions. This quaternary compound is primarily explored in optoelectronic research and development, particularly for lattice-matched heterostructures on InP substrates and for tuning the bandgap energy between the narrower InP and wider GaP endpoints. Engineers and researchers select this material when designing high-efficiency light-emitting devices, photovoltaics, or integrated photonic circuits that require specific emission wavelengths or improved thermal performance compared to binary III–V alternatives.

infrared LEDs and laserssolar cells and photovoltaicsintegrated photonicsheterostructure engineeringoptoelectronic researchbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.5Ga0.5P1

Electrical Properties

Regulatory Screening

Environmental

Export Control