In0.5Ga0.5As1

semiconductor

· In0.5Ga0.5As1

In₀.₅Ga₀.₅As is a III-V compound semiconductor alloy formed by combining equal parts indium arsenide and gallium arsenide. This lattice-matched material is engineered to provide a direct bandgap suitable for optoelectronic and high-speed electronic devices, combining the electron mobility of InAs with the stability and processing advantages of GaAs. The 1:1 composition makes it particularly valuable for heterostructure devices and quantum well applications where lattice matching to GaAs substrates is critical, enabling reduced defect densities compared to highly mismatched compositions.

high-electron-mobility transistors (HEMTs)infrared photodetectorsquantum well lasersheterojunction bipolar transistorsresearch-grade optoelectronicsintegrated photonic circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7500	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.5Ga0.5As1

Electrical Properties

Regulatory Screening

Environmental

Export Control