In0.5Al0.5P

semiconductor

· In0.5Al0.5P

In₀.₅Al₀.₅P is a III-V semiconductor compound formed by alloying indium phosphide (InP) and aluminum phosphide (AlP) in a 1:1 ratio. This material exists primarily in research and development contexts as part of the InAlP alloy family, which offers tunable bandgap and lattice properties between its binary end-members, making it relevant for optoelectronic device engineering where lattice-matching to gallium arsenide (GaAs) substrates is desired. The In₀.₅Al₀.₅P composition is particularly notable for its potential in high-efficiency light-emitting devices, heterojunction structures, and integrated photonic circuits where the intermediate bandgap and refractive index between InP and AlP enable performance advantages over single-phase alternatives.

optoelectronic devicesheterojunction structureshigh-brightness LEDsintegrated photonicsresearch-stage semiconductorsGaAs-lattice-matched substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.5Al0.5P

Electrical Properties

Regulatory Screening

Environmental

Export Control