In0.4P0.4Ga0.6As0.6

semiconductor

· In0.4P0.4Ga0.6As0.6

In₀.₄P₀.₄Ga₀.₆As₀.₆ is a quaternary III-V compound semiconductor alloy combining indium phosphide and gallium arsenide constituents, engineered to achieve specific bandgap and lattice parameters for optoelectronic applications. This material is primarily of research and development interest for infrared emitters, photodetectors, and high-speed electronic devices where lattice matching to indium phosphide substrates or tuned emission wavelengths in the near-infrared spectrum are critical. The quaternary composition offers design flexibility compared to binary or ternary semiconductors, making it valuable for integrated photonic systems and specialized optoelectronic integrated circuits that require precise spectral control.

infrared emitters and detectorsoptoelectronic integrated circuitsfiber-optic communicationshigh-speed photodiodesresearch and development semiconductorslattice-engineered heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.740	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4P0.4Ga0.6As0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control