In0.4Ga1.6Cu1S3.5

semiconductor

· In0.4Ga1.6Cu1S3.5

In0.4Ga1.6Cu1S3.5 is a quaternary chalcogenide semiconductor compound combining indium, gallium, copper, and sulfur in a mixed cation framework. This material belongs to the family of I-III-VI semiconductors and related quaternary sulfides, which are primarily investigated in research contexts for photovoltaic and optoelectronic applications where tunable bandgaps and earth-abundant constituents are desirable. The mixed-metal composition offers potential advantages in thin-film solar cells and light-emitting devices compared to binary or ternary alternatives, though the material remains largely in the development stage with limited industrial deployment.

thin-film photovoltaicssolar cellsoptoelectronic deviceslight-emitting applicationsmaterials researchbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga1.6Cu1S3.5

Electrical Properties

Regulatory Screening

Environmental

Export Control