In0.4Ga0.6As1

semiconductor

· In0.4Ga0.6As1

In0.4Ga0.6As is a ternary III-V semiconductor alloy composed of indium, gallium, and arsenic, engineered to achieve a bandgap intermediate between GaAs and InAs. This material is primarily used in optoelectronic and high-frequency electronic devices where lattice matching to InP substrates and tailored bandgap energy are critical; it appears in infrared photodetectors, quantum well lasers, and high-electron-mobility transistors (HEMTs) for RF applications. Engineers select this alloy when standard binary compounds (GaAs or InAs alone) cannot simultaneously meet lattice-matching and energy requirements, making it valuable for integrated photonic and millimeter-wave circuit platforms.

infrared photodetectorsquantum well lasershigh-frequency transistors (HEMT)optical communication componentsmillimeter-wave integrated circuitslattice-matched heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga0.6As1

Electrical Properties

Regulatory Screening

Environmental

Export Control