In0.4Ga0.6As1
semiconductor· In0.4Ga0.6As1
In0.4Ga0.6As is a ternary III-V semiconductor alloy composed of indium, gallium, and arsenic, engineered to achieve a bandgap intermediate between GaAs and InAs. This material is primarily used in optoelectronic and high-frequency electronic devices where lattice matching to InP substrates and tailored bandgap energy are critical; it appears in infrared photodetectors, quantum well lasers, and high-electron-mobility transistors (HEMTs) for RF applications. Engineers select this alloy when standard binary compounds (GaAs or InAs alone) cannot simultaneously meet lattice-matching and energy requirements, making it valuable for integrated photonic and millimeter-wave circuit platforms.
infrared photodetectorsquantum well lasershigh-frequency transistors (HEMT)optical communication componentsmillimeter-wave integrated circuitslattice-matched heterostructures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.