In0.4Ga0.6As0.6P0.4

semiconductor

· In0.4Ga0.6As0.6P0.4

In0.4Ga0.6As0.6P0.4 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched configuration designed for optoelectronic devices. This material is primarily used in infrared light-emitting diodes (LEDs), laser diodes, and photodetectors operating in the 0.9–1.7 μm wavelength range, making it valuable for fiber-optic communications and remote sensing applications. The quaternary composition enables bandgap engineering and lattice matching to indium phosphide (InP) substrates, offering superior performance compared to binary or ternary alternatives for mid-infrared and near-infrared applications where precise wavelength control and high efficiency are critical.

fiber-optic communicationsinfrared LEDs and laser diodesphotodetectors and sensorstelecommunicationsremote sensingintegrated photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.740	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga0.6As0.6P0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control