In0.4As0.4Ga0.6P0.6

semiconductor

· In0.4As0.4Ga0.6P0.6

In0.4As0.4Ga0.6P0.6 is a quaternary III-V semiconductor alloy combining indium arsenide, gallium arsenide, and gallium phosphide components, engineered to achieve intermediate bandgap and lattice properties between binary compounds. This material is primarily of research and development interest for optoelectronic and high-speed electronic applications where bandgap engineering is critical, particularly in regions where direct tunability between infrared and visible wavelengths, or between high electron mobility and wide bandgap requirements, provides advantages over binary or simpler ternary alternatives.

infrared optoelectronicshigh-frequency transistorsbandgap engineering researchlattice-matched heterostructuresphotonic integrated circuitsexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.850	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4As0.4Ga0.6P0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control