In0.3Ga0.7As1

semiconductor
· In0.3Ga0.7As1

In₀.₃Ga₀.₇As is a ternary III-V semiconductor alloy combining indium, gallium, and arsenic, engineered to achieve intermediate bandgap and lattice parameters between binary InAs and GaAs compounds. This material is primarily used in optoelectronic and high-frequency electronic devices where bandgap tuning and lattice matching to substrates are critical; it is particularly valued in infrared photodetectors, quantum well structures, and heterojunction devices because the indium content lowers the bandgap compared to pure GaAs while maintaining reasonable lattice compatibility. Engineers select this alloy family when precise control of optical absorption wavelength or electron mobility is needed in integrated photonic or RF/microwave circuits.

infrared photodetectorsquantum well lasersheterojunction transistorsoptoelectronic integrated circuitshigh-speed RF deviceslattice-engineered epitaxial layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.