In0.3Ga0.7As0.7P0.3

semiconductor

· In0.3Ga0.7As0.7P0.3

In0.3Ga0.7As0.7P0.3 is a quaternary III-V compound semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched or near-lattice-matched configuration to gallium arsenide substrates. This material is primarily investigated for optoelectronic and photovoltaic applications where bandgap engineering and lattice compatibility are critical, particularly in multi-junction solar cells, infrared detectors, and integrated photonic devices operating in the near-infrared to mid-infrared spectrum.

multi-junction solar cellsinfrared photodetectorsintegrated photonicsspace/aerospace power systemsresearch optoelectronicsbandgap-engineered semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3Ga0.7As0.7P0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control