In0.2Ga0.8As1

semiconductor

· In0.2Ga0.8As1

In0.2Ga0.8As is a ternary III-V semiconductor alloy in which indium partially substitutes for gallium in gallium arsenide, enabling bandgap engineering for specific optoelectronic wavelengths. This material is used in infrared photodetectors, laser diodes, and high-speed electronic devices where lattice matching or precise wavelength tuning is required; it occupies a middle ground in the InGaAs family, offering a compromise between pure GaAs and higher indium content alloys for applications spanning mid-wave infrared detection to integrated photonic circuits.

infrared photodetectorssemiconductor laser diodeshigh-speed transistorsintegrated photonicsmilitary/aerospace imaging sensorsfiber-optic communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.070	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.2Ga0.8As1

Electrical Properties

Regulatory Screening

Environmental

Export Control