In0.2Ga0.8As0.2P0.8

semiconductor

· In0.2Ga0.8As0.2P0.8

In0.2Ga0.8As0.2P0.8 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched configuration to gallium arsenide (GaAs) substrates. This material is primarily used in optoelectronic and high-frequency electronic devices where its bandgap and lattice parameters enable efficient light emission and detection in the near-infrared spectrum, particularly for fiber-optic communications around 1.3 µm wavelength. The composition makes it notable as an alternative to other quaternary alloys because the specific indium and gallium ratio provides a favorable balance between wavelength tunability, quantum efficiency, and compatibility with existing GaAs-based manufacturing infrastructure.

fiber-optic communication lasersphotodetectors and photodiodesintegrated photonicshigh-speed electronic devicesinfrared optoelectronicstelecommunications wavelength range

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.2Ga0.8As0.2P0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control