In0.2As0.2Ga0.8P0.8

semiconductor

· In0.2As0.2Ga0.8P0.8

In0.2As0.2Ga0.8P0.8 is a quaternary III-V semiconductor alloy combining indium, arsenic, gallium, and phosphorus in a lattice structure designed to achieve specific bandgap and lattice-matching properties intermediate between binary and ternary compounds. This material is primarily of research and developmental interest for optoelectronic and photonic applications where bandgap engineering and lattice matching to substrates are critical, particularly in systems requiring precise wavelength tuning or integration with GaAs or InP-based device platforms.

optoelectronic heterostructuressemiconductor lasers and LEDslattice-matched epitaxyphotovoltaic researchintegrated photonicsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.2As0.2Ga0.8P0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control