In0.1P0.1Ga0.9As0.9

semiconductor

· In0.1P0.1Ga0.9As0.9

In0.1P0.1Ga0.9As0.9 is a quaternary III-V semiconductor alloy combining indium phosphide and gallium arsenide constituents, designed to engineer the bandgap and lattice parameters for specific optoelectronic applications. This material family is primarily investigated for high-speed electronic devices and infrared/near-infrared photonic applications where lattice matching and bandgap tuning are critical; it offers an alternative to binary GaAs or InP when intermediate material properties are needed for heterostructure integration or wavelength engineering.

High-speed integrated circuitsInfrared photodetectorsOptoelectronic heterostructuresQuantum well devicesResearch/development semiconductorsWavelength-engineered photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.1P0.1Ga0.9As0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control